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Following subsequent mechanical polishing, this hardening reduced to nearly zero, and the average twinning stress decreased another 30 50% to 1.6 MPa and below.
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In terms of mechanical polishing, the polishing velocity and polishing pressure can be controlled by computer numerical control (CNC) machine precisely.
After chemical mechanical polishing the structures were characterized by scanning electron microscopy and electrical measurements.
The modeling and multivariable control of the multi-zone chemical mechanical polishing (CMP) is studied in this work.
In this study, chemical mechanical polishing (CMP) of PC and PMMA substrates was investigated.
The mechanism of magnesium anodizing after mechanical polishing or HF pickling was studied.
In order to improve this process, a novel method which combined megasonic vibration to assist chemical mechanical polishing (MA-CMP) is developed in this paper.
This chapter focuses on the applications of chemical mechanical polishing (CMP tungsten polish and shallow trench polish.
In this study deformations were produced by grinding and mechanical polishing using abrasive particles.
An obstacle to the widespread use of this material is its large surface roughness after mechanical polishing.
To achieve a shorter cavity length, the residue n-GaN layer was thinned and polished to about 1.5 μm by ICP-RIE and mechanical polishing process.
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