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Instead of using a full chemical mechanical polish (CMP) or a dry etch process, we proposed a method of two-step full wet etching in this study.
The proposed planarization method is relatively simple and cheap compared to the chemical mechanical polish (CMP) in terms of fabrication and engineering implementation.
To compare the damage progression, polycrystalline tungsten (PCW) and (110) single crystal tungsten (SCW) samples were prepared with (1) a mechanical polish (MP) with roughness values in the range of 0.018 0.020 μm and (2) an MP and electropolish (MPEP) resulting in roughness values of 0.010 0.020 μm for PCW and 0.003 0.005 μm for SCW samples.
We report results of a surface modification process for (1 0 0) GaSb using a gas cluster ion beam (GCIB) technique that removes chemical mechanical polish (CMP -induced surfaCMP -inducedd replacesurfaceative oxidamageh andengineereplacesace oxide, the compositionativehich depends oxidee reactive gas employed.
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In terms of mechanical polishing, the polishing velocity and polishing pressure can be controlled by computer numerical control (CNC) machine precisely.
The mechanism of magnesium anodizing after mechanical polishing or HF pickling was studied.
To achieve a shorter cavity length, the residue n-GaN layer was thinned and polished to about 1.5 μm by ICP-RIE and mechanical polishing process.
Chemical mechanical polishing.
The finishing methodology consists of mechanical polishing followed by chemo-mechanical polishing.
UK and MM developed the chemical mechanical polishing process.
Besides, it can avoid the conventional chemical mechanical polishing process.
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