Sentence examples for measurement of the interface from inspiring English sources
First, to characterize the transition from normal to dusting wear on the basis of accurate measurement of the interface temperature utilizing an eroding thermocouple and to demonstrate that the attainment of a critical interface temperature is a prerequisite for transition from normal to dusting wear.
These results demonstrate that the model for interface position reflects the actual chemical conditions inside the channel, and that reservoir pressures can be used effectively as a proxy for direct measurement of the interface position if the geometry of the microfluidic device is known.
A new experimental set-up including an optical system for precise measurements of the interface displacement has been designed and developed.
A new approach is thus needed for scenarios such as the classroom example given in "Introduction" section, where accurate measurements of the interface positions must be performed quickly with many users populating the environment.
The obtained solution is useful for an assessment by ultrasonic measurements of the interface stiffness in bonded structures for monitoring the interfacial microdamage growth due to mechanical loading and environmental factors.
Finally, an experimental procedure for measurement of the fibre matrix interface fracture and strength properties is proposed.
This method was based on a punctual measurement of the electrode milk interface impedance change due to bacterial metabolism in the milk.
The data in Table 1 show that, within the accuracy of the measurements, 15 of the interface mutations have the same values of ΔΔ Go for the two tRNAs.
Next, the system will show the video of the measurement item on the interface of joints mobility measurement to instruct users what to do directly instead of words expression or oral direction (Figure 7).
Second, automated measurements of the TM and TM interface shadow parameters could eliminate the possibility of manually introduced errors.
Non-destructive measurement of the surface and the interfaces is critical in SOI materials [2], such techniques are technologically important in characterization of growth processes [3] and in measurement of dielectric layers [4].
