Sentence examples for measurement of memory from inspiring English sources

In DIPHA, the measurement of memory is already implemented by the authors of the software.

STREAM [31] is regarded as a standard synthetic benchmark for the measurement of memory bandwidth.

Based on these observations, we demonstrate how to monitor the memory bus and detect cache side channel attacks, based on the constant measurement of memory bandwidth.

By re-conceptualizing the relationship between memory, sleep and the environment; SEAP provides a radically new framework for memory research, with implications for the measurement of memory and the design of empirical investigations in clinical, psychopharmacological and creative domains.

Study strengths include the large sample size, inclusion of younger adults and measurement of memory and processing speed, longitudinal data on glucose tolerance status and glucose levels, and relevant covariates.

With few exceptions, the examples measuring molecular turnover associated with direct measurements of memory acquisition, consolidation, remote (long-term) memory, and extinction come from the best-studied model system for learning-related plasticity, the hippocampus.

We used an integrated approach in order to visualize Mtb-specific T cell responses directed against the vaccine-components: The whole blood cell culture assay allows measurement of central memory rather than effector memory T cells [26], [27], ICS was used to assess the presence of effector memory T cells.

Two issues in the measurement of prospective memory ability suggest that evaluation of reliability and validity of various prospective memory measures is especially critical.

During electrical measurement of the memory devices, the BE was grounded and the sweeping bias was applied on the TE.

The priming task, which yields a particularly pure measurement of semantic memory, was composed of related pairs of words sharing an attribute relationship (e.g. tiger stripe).

During electrical measurement of the memory devices, the BE was grounded and the sweeping bias was applied on the TE. Figure 3 Schematic view of resistive switching memory device in an IrO x /GdO x /W via-hole structure.