For these measurements, there is no correlation between the electrode distance and the measured resistance indicating that contact resistance varies and dominates the measurements.
In the (p) a-Si H/(n) c-Si system, the mea-Si H/resistance profile was compared to the calculated resystemitheprofile across the heterojunction.
One drawback of this measurement is that the contact resistance contributes to the measured resistance.
As we double the number of wires from 20 to 40, the measured resistance reduces by 40% due to the increase in the total measured surface area.
Some metallic gauges were embedded in a Wheatstone bridge to improve the measured resistance accuracy.
The measured resistance of this wire is about.7Ω/in and it is connected to the 3.3V rail on our power supply.
The monitoring system includes a resistance element used as an ethanol sensor, with the measured resistance proportional to the concentration of ethanol in the brew.
This measured resistance is insensitive to other electrode components or electrode microstructure because there is no electrode fabrication step.
Independent of the electrolyte solution used, during cathodic polarization a sharp decrease of the measured resistance was observed.
The measured resistance increased linearly with normal force in the range of 0 0.6 N but the resistance variation rate decreased above 0.6 N.
The measured resistance from this technique provides insights into the electrochemical performance of the active material and generally correlates to the rate capability.
