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For all measured devices Nyquist plots were presented.
Weibull distribution plot of 100 randomly measured devices with a size of 0.4 × 0.4 µm2 shows good device-to-device uniformity with a yield of >85%%.
For all measured devices, the mobility increases initially with channel length and then saturates at a channel length of around 50 μm.
Tight distribution of robust Cu pillars for 100 randomly measured devices with an average current of approximately 50 mA at a Vread of 1 V is observed.
Measured devices demonstrate power device figure of merit of differential specific on-resistance (Rsp) of 2.8 mΩ-cm2 for a breakdown voltage of 4.1 kV.
The resistive switching memory characteristics of 100 randomly measured devices were observed by reducing device size in a Cr/CrO x /TiO x /TiN structure for the first time.
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(b) Measured device-to-device variation of switching voltage distribution.
(a) Measured device-to-device variation of HRS and LRS distributions.
The EIS results show good agreement with the measured device performance parameters.
Scientific items included are measuring devices, like compasses, and maps.
"These measuring devices, we would hope that is an area that would change," Dr. Murphy said.
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