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C.R.W. produced experimental devices, measured device characteristics, analysed experimental data, participated in discussions, contributed to writing the manuscript; F.W., M.B.S. and Y.C. produced experimental devices; M.J.Z., S.V.M. and G.Y performed transport measurements; A.K. contributed to Raman studies; M.M.vanW., A.F., M.I.K. provided theoretical support; K.W. and T.T. provided hBN.
The EIS results show good agreement with the measured device performance parameters.
The inset shows the TEM cross-section view of the fabricated and measured device.
Overall, the EIS analysis results are in good agreement with the measured device performance parameters.
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C.Y. and C.O.C. measured devices.
For all measured devices Nyquist plots were presented.
(b) Measured device-to-device variation of switching voltage distribution.
(a) Measured device-to-device variation of HRS and LRS distributions.
If it is no longer in use, what type of time measuring device replaced it?
They might as well have a "thigh gap" measuring device in their stores.
Also the commercial power measuring device that we have also only updates at 1 Hz.
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