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Figure 2 Relation between the annealing temperature T A and the mean nanowall width < d >.
(f) Distributions of mean nanowall width obtained from a portion of the SEM image of NiO nanowalls.
The growth temperature T A dependence of the mean nanowall width
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The mean NiO nanowall widths < d >, as determined from the SEM images and described by the fit of the log-normal function, were approximately 32(1), 75(2), 175(4), 239 8), and 416(18) nm, respectively.
The SEM results showed a significant increase in the average NiO nanowall width < d > from 32(1) to 416(18) nm, with a clear dependence on temperature.
Adjustment of the nanowall width ranging from 30 to 200 nm is achieved by adjusting the N/Ga ratio.
By adjusting the N/Ga ratio, the nanowall width can be varied from 30 to 200 nm.
With the decrease of the N/Ga ratio, the Ga diffusion distance increases, leading to the change of the nanowall width as shown in Figure 2a,b,c,d,e.
1. DO initialize the mean width: w mean =0.1*N2 2.
DO initialize the mean width: w mean =0.1*N.
The typical length is obtained from the top surface area of the AlN nanowalls divided by the nanowall average width and the density of AlN nanowalls.
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