Sentence examples for maximum recombination rate from inspiring English sources
Maximum recombination rate associated with the impurities like gold within band gap correlated with the energy level of the impurities.
The logarithm of odds (LOD) threshold was 5.0, and the maximum recombination rate was 0.4.
Ott [ 29] pointed out that N = 4 would be a reasonable maximum crossover number for chromosomes for which the maximum recombination rate is less than 0.5.
LG8 has the maximum recombination rate of 4.8 cM/Mb and LG1 the lowest at 1.6 cM/Mb likely due to the large inversion occurred on the LG1.
The above heuristic argument can be made more precise using a simple mathematical model as described in Additional file 1 (under 'Maximum recombination rate below which NFDS can cause gene-specific selective sweeps').
For each SNP site analyzed, we computed a sum of log10 (maximum recombination rate) within a 10 kb region of the SNP in order to represent the recombination rate level for this SNP and then compared this level among four groups of SNPs: not sig.
% which tested by KNT to investigate the performance of PAR in different direction gas flow conditions to see maximum hydrogen recombination rate.
The TiO2 film thickness proved to be related to two DSC operation regimes: transport limited regime (Deff ∝ TiO2 thickness, where Deff is the electron effective diffusivity) and a recombination limited regime (Deff constant); in the latter regime, the minimum recombination rate constant, kr, resulted in maximum DSC performance.
Recombination appears after 300 s of applying the voltage and rapidly increases to a maximum, and then the recombination rate decreases towards a steady state.
Whereas π1(r) always decreases monotonically with increasing r, π2(r) is always 0 at r = 0 (File S1, sect. 5) and then increases to a maximum at an intermediate recombination rate (compare blue to red curve in Figure 1C).
However, for the WZ In0.2Ga0.8N/InyGa1−yN asymmetric staggered QWs, the maximum values of the exciton recombination rate appear when the In0.2Ga0.8N well layer is smaller than the InyGa1−yN layer thickness for In concentrations y < 0.1.
