Sentence examples for maximum oscillation frequency of from inspiring English sources

Exact(1)

A 0.6 μm gate length device operates with a cut-off frequency of 7.3 GHz and a maximum oscillation frequency of 21 GHz.

Similar(59)

Cut-off frequencies as high as 300 MHz and maximum oscillation frequencies of about 600 MHz have been extracted.

All these three architectures show their capability of achieving maximum oscillation frequency (fmax) of 500 GHz for scaled layout rules.

A high value of gm in our device leads to a fantastic combination of current-gain cut-off frequency (fT) of 120 GHz and maximum oscillation frequency (fmax) of 366 GHz at VDS = 0.8 V.

The results on 1 μm gate length device show an enhancement mode operation with threshold voltage, VT = + 5.3 V, low drain leakage current, Ids,LL in the order of 1 × 10−9 A/mm along with high current gain cut-off frequency, fT of 17 GHz and maximum oscillation frequency fmax of 47 GHz at Vds = 10 V.

The designed arch-shaped GAA TFET based on Si platform demonstrates excellent performances for low-power (LP) applications including on-state current (Ion) of 694 μA/μm, subthreshold swing (S) of 7.8 mV/dec, threshold voltage (Vt) of 0.1 V, current gain cut-off frequency (fT) of 12 GHz, and maximum oscillation frequency (fmax) of 283 GHz.

The developed HBTs showed a cut-off frequency (fT) of 60 GHz and a maximum oscillation frequency (fmax) of 100 GHz using laterally etched undercut (LEU) technology.

For an HFET (Al=0.3) with a gate-length (Lg) of 1.5 μm, excellent DC and RF characteristics have been obtained, i.e., a maximum transconductance (gm) of 180 mS/mm, a cutoff frequency (fT) of 16 GHz, and a maximum oscillation frequency (fmax) of 50 GHz.

Self-aligned devices with emitter active area of 3×5 μm2 show cutoff frequency fT and maximum oscillation frequency fMAX values of 32 and 52 GHz, respectively.

For high-mobility applications, both rigid and flexible radio-frequency graphene field-effect transistors (G-FETs) were demonstrated, with extrinsic cutoff frequency and maximum oscillation frequency enhanced by a factor of ~2 on SiO2/Si substrates.

With increase of the underlap length, the unity gain cut-off frequency degrades and the maximum oscillation frequency improves beyond a certain value of the underlap length.

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