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The maximum light absorptance increases significantly up to 95%% in the wavelength range of 400 to 2500 nm.
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In addition, the NSAs architectures as photoelectrodes for PEC water splitting have intrinsic advantages of enhanced light absorptance, decoupling light absorption and charge collection, shortening minority carrier diffusion, and increased electrode/electrolyte interface for charge separation and interfacial redox reactions.
It is found that the composite NSAs exhibit a broadened absorption range and increased light absorptance over a wide wavelength region of 250 850 nm compared to the pristine In2S3 NSAs.
After pairing with ZnO, the NSAs exhibit a broadened absorption range and an increased light absorptance over a wide wavelength region of 250 850 nm.
Greatly enhanced light absorptance of black silicon has been observed in a wide wavelength range of 400 to 2500 nm, and the maximum absorptance reaches 95%%.
This is attributed to the enhanced light absorptance of nanostructured silicon [20].
Therefore, the overall light absorptance of the treated substrate improves as the number of cycles increases.
If the deposition thickness of nanofiber is limited, embedding gold nanoparticles can be a method for enhancing light absorptance.
From these results, we can conclude that gold nanoparticles moderately enhance the light absorptance of silicon nanofiber.
We suggest a design guideline that optimally combines light absorptance and electrical performance in silicon nanowire (SiNW) solar cells.
Figure 4b represents the light absorptance of samples with nanostructured networks fabricated on the surface of the C-Si at different etching time.
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