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In this case, the sidewalls are the minimum etch rate planes at the maximum lateral underetch rate directions.
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Maximum lateral photovoltage.
The shape of the corner obtained after undercutting is determined using a polar diagram of lateral underetch rates as illustrated in Figure 1 [12].
a The maximum lateral acceleration.
As the Si{111} planes have lowest etch rate in anisotropic wet chemical etching, the direction containing {111} planes (e.g. <110> and <112>) exhibit minimum lateral etching as presented in Figure 4. Figure 4 The diagram of lateral underetch rates as a function of orientation on silicon wafer using wagon-wheel structure (Etchant: 50% KOH at 78°C).
The performance levels are governed by the maximum lateral displacement.
The maximum lateral shear stress is reduced by 23% and 12%.
The maximum lateral deformation at the face was between 3 mm (0.07% lateral strain) under service load case and 7 mm (0.3% lateral strain) for abnormal load case.
The maximum lateral force prediction, calculated using allowable lateral ground acceleration, was closely approaching the experiment result and numerical calculation.
Therefore, the average and the maximum lateral deviation were selected to be measured instead.
The maximum lateral wall deflection over the excavation depth was between 0.05% and 0.1%.
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