With the calculated absorption spectrum, the maximum short circuit-current density under a perfect internal quantum process [11] is obtained by the equation: J SC = e hc ∫ 310 nm λ g I λ A λ λ d λ.
The maximum value of energy transfer efficiency (ETE) and corresponding theoretical internal quantum efficiency are estimated as 74% and 174% respectively.
The PL decay times of the I1 and I2 components can be separated into a radiative lifetime τr and non-radiative lifetime τnr if we assume that the internal quantum efficiency of each PL component is 1 at the temperature showing the maximum PL intensity.
A gallium nitride LED on sapphire has a typical internal quantum efficiency of around 70%.
internal quantum efficiency.
The red line corresponds to the experimental internal quantum efficiency.
The improvement in the internal quantum efficiency, ηint is 15%.
(3) The internal quantum efficiency (IQE) which reflects the charge separation and collection efficiencies of a device and is calculated by Eq. (6) where (J_{max}) is the maximum theoretical calculated photocurrent.
The internal quantum efficiency and internal optical loss exhibit weak dependency on temperature.
The associated internal quantum efficiency (corrected for reflection and absorption losses) was 130%.
