Sentence examples for maximum indentation load from inspiring English sources

In the reverse analysis, the experimental indentation curve performed on ZnS nanobelt is fitted as the power function to obtain the maximum indentation load and the loading curve exponent and they are substituted into the dimensionless equations to solve the mechanical constants of the nanobelt.

In addition, it has been demonstrated that the microstructures of Si after indentation with a spherical indenter depends on the maximum indentation load [9], loading/unloading rate [22] and, number of applied stress cycles [23].

where Ap is the projected contact area between the indenter and the sample surface at the maximum indentation load, Pmax.

The contact depth is derived from the initial slope, S = dP/dh, of the first 50% of the last unloading curve and can be expressed as: hc = hmax − ε(Pmax/S), where ε is the indenter constant (0.75 for a Berkovich indenter tip) and hmax is the total displacement under maximum indentation load.

A lower unloading rate or a higher maximum indentation load promotes the occurrence of a pop-out.

Nanoindentation tests were carried out through a nanoindenter (iNano) by Nanomechanics, Inc. (maximum indentation load of 50 mN), which was used in dynamic mode in order to monitor the variation of the young's modulus and hardness as a function of the indentation depth.

In the forward analysis, the numerical loading curves at the broad spectrum of possible material combinations are simulated by using ABAQUS software to extract the numerical maximum indentation loads and loading curve exponents, and they are used to establish two dimensionless equations related with the engineering/piezoelectric constants of film/substrate system.

In the reverse analysis, the loading part of experimental indentation curves performed on PZT thin film in nanoindentation test are fitted as the power function to obtain the maximum indentation loads and the loading curve exponents, and the engineering constants can be solved by using the simultaneity of dimensionless and supplemental equations.

A series of CL images of near-gap emission from GaN thin films indented to the maximum indentation loads of 10, 50, and 100 mN is shown in Figs. 2a c, respectively.

In addition, according to the previously studies [10, 17], we note here that the critical applied indentation load for direct identification of the multiple "pop-in" events in P h curve is not only dependent on the type of indenters used, but also even very much dependent on the test systems and the maximum indentation loads applied.

The inset of Fig. 4 displays the typical SEM micrograph for an indented surface obtained with the maximum applied indentation load of 200 mN.