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The same structural model (Table 1) was adopted so that the reliable maximum frequency fmax was 1.3 Hz.
The dielectric relaxation parameters, such as relaxation peak broadness, maximum frequency, fmax, and dielectric strength, Δɛ (for the α- and β-relaxation processes), were found to be blend composition dependent.
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For an HFET (Al=0.3) with a gate-length (Lg) of 1.5 μm, excellent DC and RF characteristics have been obtained, i.e., a maximum transconductance (gm) of 180 mS/mm, a cutoff frequency (fT) of 16 GHz, and a maximum oscillation frequency (fmax) of 50 GHz.
The peak cutoff frequency (fT) and maximum oscillation frequency (fMAX) are 73 and 17 GHz, respectively.
However, the percentage improvement in maximum oscillation frequency (fMAX) is more in S-JLSiNT-FETs.
The unit current cutoff frequency fT and maximum oscillation frequency fmax are up to 18 and 30 GHz, respectively.
The cut-off frequency (fT) and the maximum oscillation frequency (fmax) is 8.7 GHz and 25.5 GHz, respectively.
This temporal sampling frequency must be twice the maximum Doppler frequency fmax as f rep ≥ 2 f max.
All these three architectures show their capability of achieving maximum oscillation frequency (fmax) of 500 GHz for scaled layout rules.
The following FOMs have been evaluated: cut-off frequency (fT), maximum oscillator frequency (fMAX), stern stability factor, various power gains and parasitic capacitances at THz frequency range.
But the maximum oscillation frequency (fmax) remains low, limiting its use in practical radio-frequency (RF) circuits.
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