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The single-crystal field effect transistors from 2TBTZ show a maximum field effect mobility of ∼0.36 cm2 V−1 s−1 with a high current on/off ratio of 2 × 103.
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It is shown that the maximum field-effect mobility occurs for an ALD temperature of 190°C.
A maximum field-effect mobility of 10 cm2/V.s is obtained for an ALD deposition temperature of 190°C.
This maximum field-effect mobility corresponds with a maximum Hall effect bulk mobility and with a ZnO film that is stoichiometric.
A deposition temperature of 190°C gives the maximum field-effect mobility of 10 cm2/V.s and also corresponds with the maximum Hall effect mobility of 120 cm2/V.s.
To control for possible methodological effects on FCF and FP content, we recorded the maximum field exposure time (h), canopy cover (% cover, measured with a densiometer) and oven drying time (h) for each sample.
Mr. Adinolfi said the council should have considered maximum field strength, not the average.
ferroelectric field effect transistors.
Field effect mobility.
Field effect scanning electron microscope.
fin-type field effect transistor.
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