Sentence examples for maximum drain current from inspiring English sources

The drain current has a maximum drain current of 0.540 A/mm.

The normalized maximum drain current (I D/mm) in an AlGaN/GaN HEMT having a fin-shaped structure is higher than that in a corresponding planar structure [25].

However, a 15× increase in access resistance was observed after H2/Ar anneal, significantly degrading the maximum drain current of the tri-gate InGaAs-OI JLFETs.

We notice that all the HFETs annealed at different times operated very well with the maximum drain current obtained for the samples annealed after 1 or 3 min (Figure 4a).

The maximum drain current changes of the FET sensors with a nano-bumpy Pd film and a flat-surface Pd film were 164.6 μA and 128.2 μA to 5000 ppm hydrogen, respectively.

The I-V characteristics of HFETs show that the device with SAG structure can operate very well when the gate voltage is swept from −4 to 1 V, with a threshold voltage of about −4 V and a maximum drain current density of 540 mA/mm (Figure 6a).

The maximum drain currents (I DS,max) are 832 and 573 mA/mm for the AlN-passivated HEMT with plasma pre-treatment and without pre-treatment, respectively.

The maximum transconductances (g m max) of the conventional HEMT and Ga2O3 MOS-HEMT when biased at a value of V DS of 8 V were 179 and 200 mS mm 1, respectively; their maximum drain currents (I DS max) were 921 and 1123 mA mm 1, respectively.

However, drain current starts to decline when the L ov is larger than 7 nm, which means that drain current reaches the maximum 7.02 μA/μm when the boundaries of the lateral gate align with the source/pocket interfaces.

Figure 7 One-dimensional model to analyze drain current fluctuation.

Our results reveal the modification of the energy bandgap, carrier density, and drain current upon strain.