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The SiGe/Si NPN HBT of maximum current gain β=80 is fabricated by this process flow.
A threefold increase in maximum current gain β, a fourfold improvement in peak ft and a 2.5 times increase in peak fmax are predicted for strained-Si pnp HBTs on a 50% Ge virtual substrate in comparison with identical conventional silicon pnp BJTs.
Such a finger emitter/base junction proved to significantly enhance both the current gain and the responsivity in the blue spectral region with respect to the standard fully implanted detector (maximum current gain of 158 and 72, and responsivity = 0.25 and 0.20 A/W, respectively).
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The simulation results shows that an significant improvement is noticed in the key analysis parameters such as drain current (Id), transconductance (gm), cut off frequency (fT), RF current gain, maximum cut off frequency (fmax) and RF power gain of the gate material engineered devices with respect to SMG normally off n++GaN/InAlN/AlN/GaN HEMTs.
The cut-off frequency fT is defined as the frequency at which the current gain becomes unity and indicates the maximum frequency at which signals can be propagated in the transistor.
The PS-BJT exhibits promising characteristics with a maximum current density greater than 65 μA μm− 1 and a tunable high current gain β.
Map of maximum current speeds and graphs of maximum current speeds at four points of interest.
(a) Sydney Harbour maximum current speed map for scenario P90high.
Reducing the base current increases the electrical current gain.
A 10 uA current source is well below the maximum current a human can handle.
maximum current density.
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