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The maximum breakdown voltage measured was 400 V.
A new simple procedure to predict the optimal spacing and the maximum breakdown voltage has also been presented.
By modifying the combination of the diode and transistor gate stacks, the robustness of the device is optimized, achieving a maximum breakdown voltage (VBR) of 4.9 V.
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The results are presented as contour plots of breakdown voltage and maximum surface field as a function of the two doses, with the locations of peak bulk and surface fields also indicated at each point.
A high gate breakdown voltage of 35 V, a maximum drain saturation current of 780 mA, a maximum transconductance of 235 mS/mm, and a wide gate voltage range larger 3 V with the transconductance larger 150 mS/mm are obtained.
The lower limit of the ESD design window is defined by the maximum ratings of the signal voltage and the upper limit by the minimum critical breakdown voltage of protected devices.
Breakdown voltage.
Therefore breakdown voltage significantly improves.
(a) Breakdown voltage versus gas pressure.
Figure 6 Breakdown voltage versus GaN thickness and dependence of aluminum composition on breakdown voltage.
However, the breakdown voltage increases slightly with increasing pressure.
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