Sentence examples for maximum annealing temperature from inspiring English sources

Therefore, in the subsequent experiments, we fixed the maximum annealing temperature to be 400 °C.

Curvature temperature time experiments are used to examine the effects of hold temperature and maximum annealing temperature on the inelastic response of the Au films.

Variation of the maximum annealing temperature allowed generation of partially ordered samples with different amount, perfection and morphology of mesophase or crystals.

The holding time at the maximum annealing temperature was 30 min and the flow rate of mixture gases was 0.5 standard cubic centimeters per minute (sccm) during the annealing process.

In our previous study [16], the emission bands recorded up to maximum annealing temperature of 700 °C showed a trend of decreasing PL intensity with increasing temperature and the observations were understood on the basis of the various processes such as self-trapped excitons recombination which is a combined effect of defect centres generated from oxygen vacancies and particle size variation.

Indeed, the dilatometric annealing curve shows that the absolute value of the derivative d / dT (Δ V / V 0 ) = 3 × Δ l / l 0 is still increasing at the maximum annealing temperature, i.e. the maximum reaction rate of stage C is not yet attained (Fig. 2).

High mobility solution spun IBZO and ISZO devices, "cured" via in situ air UV photo annealing, were thus fabricated at maximum anneal temperatures of 200 and 225 °C.

The intensity of the red band increases to a maximum for annealing temperature from 300 to 800°C, and then, it decreases strongly with increasing temperature.

A total of 112 primers were designed using online software Primer3 version 4.0.0 (Rozen and Skaletsky, 1999; http://primer3.ut.ee/), with the minimum and maximum primer annealing temperature changed to 58°C and 60°C, respectively, based on a total of 112 randomly selected microsatellite motifs.

Sedky, S., Witvrouw, A., Bender, H. & Baert, K. Experimental determination of the maximum post-process annealing temperature for standard CMOS wafers.

As evident from Figure 5b, PL intensity increases and reaches a maximum at an annealing temperature of 700°C.