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A maximal capacitance density of 14 fF/μm2 at 1 KHz was obtained.
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The transient component of whole-cell potassium outward currents reached maximal capacitance-corrected current densities of 329±42 pA/pF in activation protocols, while the sustained component measured only 56±7 pA/pF (n = 35 38).
More recently, Shu and his co-workers reported a capacitance of 413 F g−1 at the current density of 1 A g−1 and a retention about 88%% of its maximal capacitance at a current load of 4 A g−1 [26, 27, 27].
This reduces the capacitance density.
A capacitance density of 7.8 fF/μm2 at 10 KHz was obtained.
The leakage mechanism, capacitance density versus frequency (C-F), and capacitance density versus voltage (C-V) of this InN-based MIS structure were also investigated.
By this method, a capacitance gain of 2400% has been obtained at low frequencies with a capacitance density of 180 nF/cm2.
The capacitance density keeps almost constant from 1 to 300 KHz.
Further, the capacitance density can be enhanced by increasing the height of nanopores.
The Al/Er2TiO5/TaN capacitor exhibited a higher capacitance density than the Al/Er2O3/TaN one.
The capacitance density reached 7.8 fF/μm2 at 0 V, corresponding to a dielectric constant of 26.3.
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