Symmetry breaking induced by the in-plane strain not only modulates the band structure, but also changes the carrier population at the valence band maximum and conduction band minimum so that the transport current density can be regulated.
Therefore, on both sides of the valence band maximum and conduction band minimum, an energy tail is formed.
Our calculated band gap is 1.70 eV with the valence band maximum and conduction band minimum both locating at Κ point.
Alternatively, the wide-gap semiconductor ZnO was also investigated, since the band gap and the energetic position of the valence band maximum and conduction band minimum of ZnO are very close to that of TiO2[9].
From both UV-visible and XPS spectroscopy, it was found that the mechanism for band gap narrowing was due to the shifting of the valance band maximum and conduction band minimum of the materials.
Wide-gap semiconductor ZnO was also investigated, since the band gap and the energetic position of the valence band maximum and conduction band minimum of ZnO are very close to those of TiO2[9].
Alternatively, a wide-gap semiconductor ZnO is also investigated, since the band gap and the energetic position of the valence band maximum and conduction band minimum of ZnO are very close to that of TiO2 [8].
In the DOS plots, the defect states are located inside the band gap of the pristine h-BN sheet, as shown Fig. 4, where the valence band maximum and conduction band minimum of the pristine h-BN sheet are indicated by VBM and CBM, respectively.
This is because that the band gap and the energetic position of the valence band maximum and conduction band minimum of ZnO are very close to that of TiO2 and that the wurtzite structure of ZnO favors the formation of ordered 1D structures, moreover, presenting better electron transport compared with TiO2[4].
b is the structures of valence-band maximum and conduction-band minimum of TlPbI3 and CsPbI3.
