Sentence examples for matrix was grown from inspiring English sources
The GaAsBi matrix was grown at 400 °C.
A thin layer of ∼2 nm inert NaYF4 matrix was grown as a shell on top of the hexagonal core NaYbF4 Gd3+/Tm3+ UCNPs (∼22 nm) to minimize surface-related quenching mechanisms.
Transmission electron microscopy analysis was carried out to establish that the polymer matrix was growing around the layers.
InAs/InGaAs DWELL structures with a varied InGaAs matrix were grown by GS-MBE on GaAs (100) substrate.
Films containing bundles of well-ordered graphene multilayers, onions and nanotubes embedded in an amorphous matrix were grown alongside purely amorphous films by changing the deposition parameters.
Shape-engineered InAs quantum dots (QDs) embedded in a simple GaAs matrix were grown by a molecular-beam epitaxy and investigated by cross-sectional transmission electron microscopy (TEM) and photoluminescence (PL) spectroscopy.
Since the GaAsBi matrix is grown at low temperature, the In/Ga intermix are reduced during the capping process of InAs QDs and a relatively abrupt interface is formed which leads to the potential barrier for the carriers trapping.
Er-doped Ge nanocrystals in Al2O3 matrix were grown on p-Si (100) substrates at 600°C under vacuum using pulsed-laser deposition (KrF excimer laser with wavelength 248 nm, energy 300 mJ, and pulse duration 20 ns).
Recently, interest in composites with thermoplastic matrix is growing thanks to their considerable advantages also in terms of recyclability.
Using wavelet discretization with a standard wavelet diagonal preconditioning for singularly perturbed two-point boundary value problems, one can observe that condition numbers of arising stiffness matrices are growing with decreasing parameter ϵ when a nonsymmetric part starts to dominate.
Using wavelet discretization with a standard wavelet diagonal preconditioning for singularly perturbed two-point boundary value problems, one can observe that the condition numbers of arising stiffness matrices are growing with decreasing parameter ϵ when a nonsymmetric part starts to dominate.
