Exact(2)
It was found that the formation of the aqueous complex material was caused by the deprotonation of pyridinium groups of P4VP molecules and consequent hydrogen bonding formation between pyridine and carboxylic groups.
A decrease of the refractive index and extinction coefficient of the UV-irradiated material was caused by UV-induced chain scission and subsequent oxidation of the plasma polymer network.
Similar(58)
These results suggest that mercury entrapment within the material is caused by a mechanism involving macroscopic (>0.1 mm) heterogeneities in the pore structure.
The reasonable agreement between the theory and the measurements indicates the attrition of bed material is caused by particle particle and/or particle wall impacts in the core of the bed.
Moreover, temporal forgetting of memorized material is caused by memory decay [37] and processes of interference [38].
This is consistent with the recent data indicating that shuffling of P. furiosus genetic material is caused by mobile genetic elements [ 18, 19, 32, 33].
We suggest that it may be unlikely to observe any hydrogen uptake in alkali-doped carbon materials at or above ambient temperature in the TGA (thermogravimetric) system, the previously reported hydrogen uptake in alkali-doped carbon materials was caused by either uncyclable chemisorbed hydrogen on the defects of carbon (defects were produced by repeated heat treatment) and/or moisture adsorption.
The magnetism in ferromagnetic materials is caused by the alignment patterns of their constituent atoms, which act as elementary electromagnets.
At the same time, the utilization efficiency of such materials is caused by maintaining of the nanodispersity.
However, it may be noted that localized charge carrier traps within the semiconductor materials are caused by structural defects or chemical impurities.
A principal interest in the study of these materials is caused by the dependence of their physical properties (band gap, concentration and mobility of charge carriers, transmittance, etc).
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