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Among the group-III nitrides, wurtzite InN (w-InN) is a very promising semiconductor material of application in high-frequency/high-speed/high-power heterojunction field-effect transistors (HFETs) [1 4], due to its superior electron transport properties, small effective mass, and high mobility.
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After theoretical and experimental determination of thermodesorber operating characteristics (temperature profile, losses, removal of desorbed material), examples of applications in several fields are given.
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It is worth pointing out that PEEK turned out not to be the ideal material for this type of application.
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In brief, SWCNT demonstrates unique photonics properties for being a promising candidate material of future photonics applications.
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