Sentence examples for material in atomic from inspiring English sources

Exact(1)

Although AFM can image surface of material in atomic resolution [30, 31], the imaging conditions are very strict, especially in air under ambient conditions.

Similar(59)

Polyimide/silica (PI/SiO2) hybrid films were prepared by the sol gel process to improve the erosion resistance of polyimide materials in atomic oxygen (AO) environments.

These are the primary fissionable materials used in atomic bombs.

October 4, 1903 Birmingham, England August 25 , 1992Cambridge, England Cyril Stanley Smith, (born Oct. 4, 1903, Birmingham, Warwickshire, Eng. died Aug. 25, 1992, Cambridge, Mass., U.S.) American metallurgist who in 1943 44 determined the properties and technology of plutonium and uranium, the essential materials in the atomic bombs that were first exploded in 1945.

An important aspect in the preparation of substrate materials to use in atomic force microscopy lies in the question of interactions introduced by treatments designed to immobilize the sample over the substrate.

239Pu was used as fissile material in the first atomic bomb detonated in the "Trinity test" on 15 July 1945 in New Mexico.

We will illustrate the material with its applications in atomic physics and biological imaging.

Uranium must be enriched to be used in nuclear power plants, but further enrichment can produce material suitable for use in atomic bombs.

The incredibly valuable material is being used in atomic clocks, to make the timekeeping devices even more accurate than ever before.

Discrete atomic information, obtained from molecular dynamics simulation of crack propagation along GBs in polycrystalline solids, is incorporated with asymptotic singular fields near an interfacial crack tip between dissimilar materials in the atomic-level J-based mutual integral, to extract the individual stress intensity factors of modes I and II.

On the other hand, the presence of nitrogen atoms in Ga(In)As lattice makes it difficult to obtain high quality materials due to dissimilarities in atomic radius and electronegativities between N and As atoms of the host semiconductor.

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