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The thickness dependent band gap of MoS2 nanosheets makes them a potential material for optoelectronic devices.
Single-crystal 1,4-bis(4-methylstyryl)benzene 4-methylstyryl benzenel for optoelectronic device applications.
ZnO has been recognized as a very promising material for optoelectronic application in the UV region; so, there is an increasing interest in high-quality ZnO film.
Moreover, with high optical transmittance and high chemical stability, graphene is a promising building block of window material for optoelectronic devices.
However, it has been long considered unsuitable material for optoelectronic applications [1], due to its indirect band gap, which means it is a poor light emitter.
Although n-type semiconducting ZnO is a significant material for optoelectronic applications, it is unstable under both acidic and alkaline conditions.
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Binary wide-bandgap oxides are promising materials for optoelectronic, catalyst, and sensor applications [1, 2].
The availability of compliant substrates has opened new avenues to exploit SiGe materials for optoelectronic applications.
Semiconductor nanoparticle/polymer composites potentially allow the design of photonic materials for optoelectronic devices.
Group III-V semiconductor phosphides are important materials for optoelectronic devices working at visible and near-infrared wavelength range[7, 8].
The excellent overall properties of polyimides from 3,3′-HBPDA and 3,4′-HBPDA made them promising candidate materials for optoelectronic applications.
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