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Since the early 1960s silicon has become by far the most widely used semiconductor, virtually supplanting germanium as a material for device fabrication.
These results highlight the potential of the material for device applications.
Therefore, InSb is a highly promising material for device applications involving high-speed-response electronic nanodevices, optical communication devices, and optical detectors [13, 14].
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Carbon nanopapers (CNPs) are promising candidate materials for device areas and engineering.
This work offers an effective approach to enhance relative performance of ordered mesoporous carbon materials for device applications.
Much of Hung's research interests has been in the field of one-dimensional nanostructures including the design, fabrication, and characterization of optoelectronic materials for device applications.
Semiconductor nanocrystals have been receiving considerable attention over the past several years as model systems exhibiting quantum confinement effects and hence as potential candidate materials for device applications such as optical limiting and optical switching [1 6].
Present study gives an insight into the in situ growth behaviour of crystals and has implications in the design and development of advanced materials for devices.
Interest in these materials for devices having high permittivity induced by electrostatic polarization, has been revived in the past few years.
The raw material for the device is the plant Arundo donax, which resembles bamboo in appearance.
North Korea's plutonium program was the source of raw material for the device it tested in October 2006.
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