Sentence examples for material dissimilarity from inspiring English sources

Effects of geometry of micro-beam resonators, and material dissimilarity between support and resonator on support loss are examined.

This solution may have potentially significant application in addressing challenging material science and engineering problems concerning inelastic deformation and material dissimilarity.

This general solution is expected to have wide applications in addressing engineering problems concerning inelastic deformation and material dissimilarity as well as contact loading.

The approximation is based on the factorization of the solution on the material dissimilarity factor, the crack interaction factor and the effective spring stiffness solution for non-interacting cracks in a homogeneous material.

The unknown equivalent eigenstrains are introduced to represent the material dissimilarity of the inhomogeneous inclusions, their interactions and their response to external loading, and determined by solving a set of simultaneous constitutive equations established for each equivalent cuboidal inclusion.

This modeling approach is applied to simulate the fretting contact involving multilayered materials and functionally graded coatings and to unfold the dependence of the tangential load displacement relationship on the degree of material dissimilarity.

Moving to the right side of the house, there are material dissimilarities in the foyer, the master bedroom, and the master bath.

The force displacement relation of the reduced friction model agrees well with the FEM solution, even for dissimilar materials, because the dissimilarity effect is small in practical applications.

The distribution and thickness of individual layers as well as the disparity in petrophysical properties such as porosity (13%26%%), void ratio (0.15 0.35) and bulk density (1880 2174 kg/m3) are not considered varied enough to warrant a non-trivial impact on the normal compaction trend and linear increase in hydrostatic pressure even though there are dissimilarities in material and properties.

On the other hand, the presence of nitrogen atoms in Ga(In)As lattice makes it difficult to obtain high quality materials due to dissimilarities in atomic radius and electronegativities between N and As atoms of the host semiconductor.

For data from each of these categories, we have developed some sensible dissimilarity measures (see Materials and Methods).