The Monte Carlo simulations with only the background masked, produced a cluster-extent threshold of 492 voxels for the regression analysis between the response to the positive stimuli and HA.
In this experiment, we used the foreground mask produced with the SuBSENSE [45] segmenter.
The ES nano-mask produced was etched by dry etching and patterning.
The larger and smaller silica masks produced approximately 100-nm and approximately 20-nm platinum nanoparticles, respectively.
(a) RapidEye false color composite (RGB are NIR-Rededge- Red, respectively) (b) The LPIS mask produced by the proposed method.
where GT is the number of voxels in the ground truth binary mask, PET is the number of voxels in the delineated binary mask produced by the delineation method, Vol PET is the volume of the automatically delineated sphere and Vol true is the mathematically calculated volume in case of the NEMA IQ phantom and the initial mask volume for the synthetic phantoms.
To find the under-etch length for the mask produced by diffusion, we introduced a correction for the increase in the n-type beam width x due to the side diffusion of phosphorus, w c = w + x (see Figure 1b), where x = 0.8x j.
The Large Mask produced a slightly larger elevation on average (42% relative to baseline, SE 30%), though thresholds were neither significantly different from the Small Mask [t(4) = .21, ns] nor baseline conditions [t(4) = 1.38, ns] (see Figure 3b).
Masking effects were considerably weaker with static stimuli compared to the drifting stimuli tested in Experiment 2. The Small Mask produced only 28% (SE 11%) threshold elevation with respect to the baseline condition, of borderline significance [t(4) = 2.67, p = .056].056]
Photoresist was exposed using a glass chrome mask produced by JD Photo-Tools (United Kingdom).
