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The mask pattern, formed by a photolithographic process, permits the creation of tiny transistors and other electronic components in the silicon.
Figure 3 Microscope image of the photo-etched mask pattern.
The influences of the laser energy and mask pattern on the embossed structures are presented.
Considering the advantages and disadvantages of undercutting, special attention must be given while designing mask pattern.
Figure 7 Undercutting at the convex corners of the mask pattern on Si{100} wafer.
In this method, the mask pattern comprises of ridges which widen with a small angle.
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The material is exposed to ultraviolet light through a mask patterned with the outlines of cells.
Tested mask patterns ranged from 200 to 600 μm.
The fabrication of SAS requires subwavelength scale etch mask patterns.
The arrangement of nanostructured Si can be controlled by mask patterning.
The two devices shown as insets are implemented using the mask patterns of Figure1a.
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