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These pre-etched patterns act as aids for the subsequent alignment of mask edges.
It happens due to the undercutting at misaligned mask edges as shown schematically in Fig. 4.
Thus, precise alignment of mask edges is important in micro/nano fabrication.
For alignment of subsequent mask edges, a square window is added corresponding to each alignment fork.
The undercutting occurs due to misalignment of mask edges and the final structure is defined by {111} planes.
Prolonged etching leads to undercutting at the mask edges due to the misalignment of the edges with the ⟨110⟩ direction.
Similar(20)
The mask edge (or line) is called the zone axis of the planes passing through it.
The etched profile of <100> beam depends on the etching characteristics of different planes appearing at <100> mask edge.
Hereafter, mainly undercutting word is used for the lateral etching at any type of mask edge and corner.
The planes appearing at the mask edge are the minimum etch rate planes between the horizontal plane and vertical plane at that edge.
One another technique was developed by the current author to utilize elevated temperature near micron-sized mask edge to achieve growth of silicon nanowires.
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