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We conclude that if the side gate length equals the main gate length, the hot electron effect diminishes optimally.
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The main reason is that at gate length around or below 10 nm, the sensitivity of transistor parameters, (most importantly, the gate voltage threshold) of silicon field-effect transistors (MOSFETs) to inevitable fabrication spreads grows exponentially.
These results demonstrate that the effective gate length (Lg*) is a main factor for the off-state, where the channel potential mainly governs the I V characteristics.
MOSFET gate length scaling has been a main source of progress in digital electronics for decades.
Its barrel points at the main gate.
12 30pm, March 1, Woodlawn main gate.
Inside the main gate, there is order.
I went through the main gate, Bab al-Malik.
Perhaps this wouldn't have happened at the main gate.
Visitors are searched repeatedly as they approach the main gate.
Both meet at the main gate, 25th Street and Fifth Avenue.
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