Sentence examples for magnetic memory devices from inspiring English sources
Argonne National Laboratory site on magnetic memory devices.
We will also discuss the possible evolution of magnetic memory devices into three dimensional architectures, such as race-track memory.
This model is confirmed by rheological tests of the dispersion of γ-Fe2O3 particles in an organic solvent which is used for the production of magnetic memory devices.
However, the demand to increase storage density and improve latency is driving an exhaustive study of alternative storage schemes for the future generations of magnetic memory devices.
Accordingly, we address some practical issues of the nonautonomous soliton managements underlying in the fast remagnetization process of data inputs within magnetic memory devices.
A close coupling of magnetization and polarization via magnetoelectric and magnetodielectric effects holds promise for new generations of storage media with both magnetic and electric polarization and opens the possibility of electrically reading/writing magnetic memory devices.
Considerable attention has been paid to achieve controllable and fast domain wall propagation in thin magnetic wires (planar and cylindrical) taking into account the possibility to use it for high-density data storage devices (magnetic random memory devices, logic devices)[1].
Additionally, a tiny amount of lutetium is added as a dopant to gadolinium gallium garnet (GGG), which is used in magnetic bubble memory devices.
Electron holography has been an important tool for revealing electric and magnetic field distributions in microelectronics and magnetic-based memory devices, however, its utility is hindered by several practical constraints, such as charging artifacts and limitations in sensitivity and in field of view.
These results show that the B-doped gh-C3N4 systems could be a ferromagnetic half-metallic material for magnetic memory and spintronic devices.
This eventually ushers the slow relaxation of magnetization with high energy barrier making such systems potential candidates for future magnetic sensory and memory devices.
