Interestingly, these compounds do not include magnetic element, such as transition metal and rare-earth elements.
Non-magnetic elements, such Bi [29] or Li [30], have been doped into ZnO and room temperature ferromagnetism has been also observed.
In order to form diluted magnetic semiconductors, ZnO nanostructures have been doped with magnetic metal elements, such as Mn, Co, or Ni [27].
Lastly, we consider magnetic TM elements, such as Mn, Fe, and Co, as representative of the VIB, VIIB, and VIIIB group elements that have, respectively, one, two, and three electrons in excess to Mo atoms.
In this paper, we will discuss the requirements of magnetic element detection, such as spatial resolution and magnetic sensitivity.
In this paper, we provide a systematic study on the properties of various p-type dopants, vacancies, and magnetic impurities in monolayer MoS2 including group III dopants, i.e., B, Al, and Ga and group IV dopants, i.e., C, Si, and Ge, as well as magnetic transition metal elements such as V, Nb, and Ta.
Incorporating both the magnetic leads and the underlying semiconductor, a spintronics circuit could hold its memory when turned off, as the magnetic elements remain magnetized.
Based on a modified design we present the magnetic configurations that allow compensating gravity for different elements such as hydrogen, water or helium but in smaller volumes.
