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were combined with 2 1 tert-butanol: water (0.33 M) at room temperature.
We have successfully developed a method for producing high-quality diamond films with excellent electrical characteristics and high electrical resistivity (1010 1013 Ω m) at room temperature.
The residue obtained from the free phenolics extraction was hydrolyzed with NaOH (40 mL, 2 M) at room temperature for 1 h with continuous shaking.
PL spectra of treated Si NWA samples prepared with H2O2 concentrations of (a) 0.5, (b) 2, and (c) 5 M at room temperature.
In order to tune the density of CIOMBs, as-prepared CIOMBs were immersed in concentrated HCl (12 M) at room temperature for 1 12 h.
The growth solution was prepared by mixing HAuCl4 (2 mL, 0.025 M), AgNO3 (1 mL, 0.01 M), CTAB (50 mL, 0.2 M), BDAC (50 ml, 0.2 M) at room temperature.
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Imaging of cells was performed in PBS containing 1 m M CaCl2 and 0.5 m M MgCl2, at room temperature.
The cross-plane thermal conductivity is 1209 W/(m K) at room temperature, which is even higher than that of diamond.
Following hybridisation the sections were rinsed in 2×SSC, 1 m M DTT at room temperature and transferred to 2×SSC for 1 h.
The oxygen reduction reaction (orr) was studied on composite electrodes GC/PPy/PPy(NixCo3−xO4 /PPy with x=0.3 and 1, in 2.5×10−3 M KOH+0.8 M KCl at room temperature.
These quantities decrease to 0.11 and 0.47 ms at room temperature, indicating the existence of non-radiative trap states which interact with excited Er3+ ions.
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