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This sample has shown lowest sheet resistance.
Under this condition, layers exhibited the lowest sheet resistance.
SiO2 buffer layer leads to the lowest sheet resistance.
The lowest sheet resistance of the PAD-AZO was about 740 Ω/sq.
The hybrid electrodes with 6 wt.% of SWCNTs exhibited the lowest sheet resistance (28.9 Ω/sq).
The lowest sheet resistance occurred at a rGO concentration of 0.025% (w/w).
Similar(30)
Low sheet resistance of 3 Ω/sq.
A low sheet resistance of 47.6 mΩ/□ is obtained at that calcination temperature.
High values of П mean low sheet resistance and high transmittance.
In a transistor, low sheet resistance in source/drain region is a crucial matter.
The hybrid transparent electrodes on plastic films exhibited low sheet resistance, high transparency, and excellent flexibility.
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