Sentence examples for lowest etch from inspiring English sources

As the Si{111} planes have lowest etch rate in anisotropic wet chemical etching, the direction containing {111} planes (e.g. <110> and <112>) exhibit minimum lateral etching as presented in Figure 4. Figure 4 The diagram of lateral underetch rates as a function of orientation on silicon wafer using wagon-wheel structure (Etchant: 50% KOH at 78°C).

The {111} planes are the most stable (i.e. lowest etch rate) planes in wet anisotropic etchants.

The lowest etch rate and the best anisotropy were obtained with the SF6/CHF3 gas mixture.

The lowest etch rates (BHF, KOH) are found for nearly stoichiometric silicon nitride with a refractive index close to 2 and deposition rates above 40 nm min−1.

The lowest etch rate of 1.8 nm/min is obtained for the ion energy of 75 eV and it is 2.8 times as low as that for the ion energy of 32 eV.

After development the holes were etched down 30 nm by wet chemical etching (WCE) using H2SO4:H2O2:H2O with a low etch rate of 1 nm/s.

The different thicknesses of the silicon nitride layer are achieved by successive masking and reactive ion etching of partially overlapping openings at a low etch rate (10.8 nm/min, 15.8 nm/min, 20.1 nm/min, or 26.5 nm/min).

This surface layer contains an atomic concentration of Ru up to 9% and exhibits low etch rate (less than 3 nm min−1) which accounts for the good etching resistance of the stained film.

This low etch rate of Si resulted in less heat generation and no obvious grain coalescence.

Pure KOH provides very low etch selectivity between Si{110} and SiO2 in comparison to NH2OH-added KOH as presented in Fig. 3.

a At an oxygen flow rate of 30 sccm, the structures were not able to be folded due to the low etch rate.