Sentence examples for lower implantation from inspiring English sources
Our data from embryo transfer also indicated that blastocysts from diabetic mice can implant in the normal recipients, while blastocysts from control mice have a lower implantation rate in diabetic recipients.
With the 25 mm Lotus valve, the lower implantation height, and the prosthesis oversizing, with greater radial strength, ensured greater stability of the valve.
The o-Ps lifetime was reduced at lower implantation energies, indicating smaller free volume elements near the film surface (i.e., in the top ∼50 nm).
Lower implantation energies have been neglected since they bring information also from the annihilation of positron from non-thermalised ensemble and from the natural oxide layer.
No Ge-NC was detected with a lower implantation energy of 3 keV at a dose of 1.5 × 1016 cm-2, whereas a well-defined 2D-array of nearly spherical and well-separated Ge-NCs within the SiN matrix was observed for the higher-energy-implanted (5 keV) sample for the same implanted dose.
Lashen et al. found a lower implantation rate (13% and 17%) and clinical pregnancy rate (16 % and 23) in 108 Indian women compared to 216 Caucasian women after IVF [5].
In oocytes, chromosome mis-segregation is common and generates aneuploid embryos, so causing lowered implantation rates, pregnancy loss and birth defects (Nagaoka et al., 2012; Jones and Lane, 2013).
Incidences of all pneumothorax (including asymptomatic) and pneumothorax requiring chest tube placement were lower in implantation of coils (23% and 3%, respectively) vs. seeds (54% and 29%, respectively; p=0.02 and 0.01).
But cluster ions have not been involved, especially in the case of lower energy implantation.
Moreover, especially in tumors with a poor response to radiotherapy, the incidence of complications is lower after implantation of an endoprosthesis than after osteosynthesis [25].
For the lower Ge+ implantation energy of 3 keV, no Ge-NC was observed in the stack structures, and the resultant MIS structure exhibited a small memory window of 0.74 V, which is attributed to a net negative charge storage in GeO x -dangling bonds.
