Sentence examples for low voltage memory from inspiring English sources

The innovative idea is to bring the loadless 4-transistor latch into the realm of low voltage memory cells by exploiting features of the 28 nm FDSOI Process and by adding a 2-transistor readbuffer with a footer line.

In this paper we propose and design a low voltage, differential write, single ended read memory cell that consists of a total of 6 transistors.

This modification leads to an effective increase in the read-out conductance ratio of two to three orders magnitude under low voltage operation, associated with a large memory window of ∼5.3 V.

Given their memory window of 1 V at an applied sweeping voltage of ±2 V, low P/E voltage of ±2 V, and improved retention performances, low-voltage NC memories show promise for application in non-volatile memory devices.

Given the improvements in the retention performances (Figure 6c), sample A4 shows promise for application in low-voltage NC memory.

A 1-V memory window was observed for A4 at the ±2-V sweep (Figure 8), which shows the potential to prepare a low-voltage NC memory.

Given their memory window of 1 V at an applied sweeping voltage of ±2 V, low P/E voltage (±2 V), and promising retention performances, low-voltage NC memories have a strong potential for application in non-volatile memory devices.

This logic element enables low voltage operation for high density circuit design of embedded memory.

The obvious memory window can be used to define "1" and "0" states at low voltage operation.

If they are low voltage (pins) it's a bit more complicated.

See my other answers (and guide below) about replacing low voltage lighting.