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Low sheet resistance of 3 Ω/sq.
A low sheet resistance of 47.6 mΩ/□ is obtained at that calcination temperature.
High values of П mean low sheet resistance and high transmittance.
In a transistor, low sheet resistance in source/drain region is a crucial matter.
The hybrid transparent electrodes on plastic films exhibited low sheet resistance, high transparency, and excellent flexibility.
High transmittance and low sheet resistance means the large ratio of σdc/σop.
The graphene films with low sheet resistance were grown by chemical vapor deposition.
Moreover, the nickel coating displays low sheet resistance of ca. 1 Ω sq−1.
Highly transparent films (∼88%) were obtained with a low sheet resistivity of ∼90 Ω/sq.
This is the best compromise result for double-sided AgNWs/PVC/AgNWs film with high transmittance and low sheet resistance.
The hybrid electrodes exhibited a low sheet resistance (less than 50 Ω/sq) with a transparency of 80%to82%2%.
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