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The on current was defined as the highest drain current measured at high positive gate biases, and the off current was defined as the lowest drain current recorded at low negative gate biases.
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Low negative impact c.
The threshold voltage decreases with increasing positive gate bias, and increases with increasing negative gate bias.
They are found to conduct well at negative gate voltages while they are almost insulating at positive gate voltages.
The lower leakage current indicates that the reduced oxygen vacancy-related levels suppress electron injection from both the substrate and gate given that the positive gate voltage corresponds to substrate injection and the negative gate voltage corresponds to gate injection.
Based on the measured results, the gate-source current of the multiple-gate ZnO MOSFETs was reduced at the negative gate bias regime in comparison with that of the single-gate ZnO MOSFETs.
Therefore, at the applied negative gate potential, the absolute value of the negative charge on the surface oxide increases.
Figure 6 also shows that applying a negative gate bias (Vg = −10V) can enhance the sensitivity.
This agreement carries over to the range of negative gate voltages with thermally activated transport.
The conductance of the ZnO nanowire decreases with increasingly negative gate voltages.
The C V curve shifts to a negative gate bias direction with increasing N2/O2 ratio.
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CEO of Professional Science Editing for Scientists @ prosciediting.com