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An alternative can be found in Bloch Surface Waves (BSW) sustained at specially designed dielectric multilayer stacks with low absorption losses.
In this study, the mirrors are dielectric mirrors composed of a stack of TiO2 and SiO2 thin-films (high and low refractive index materials, respectively, in the visible spectrum) that offer good performance characteristics with high reflectivity and low absorption losses [ 25– 27].
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Random and sparse silver nanowire (AgNW) film [13], which demonstrated superior FoM performances, was regarded as the most promising candidate to replace ITO, due to its low inter-wire junction resistance and low absorption loss [14].
This is because the Ho YAG creates a vapor channel in water [ 18, 19] and Er:YSGG transmits in the channel with a low absorption loss.
Silver (Ag) nanostructures are used for the demonstration of the coupling between LSPs and excitons in SiN x due to their lowest absorption losses and a superior enhancement of the local electromagnetic field among all the metals with plasmon resonances at visible frequency, which is near the luminescence wavelength of SiN x films.
The key benefits of this technology include: the abundance of the low-cost relatively low-absorption-loss polymers; the ease of fiber preform fabrication by molding, drilling, stacking and the use of other standard polymer processing techniques; and finally the advantage of simple fabrication method by fiber drawing at relatively low temperatures.
At low temperature, the Q factors of the SPP modes are higher than that of the optical mode (dipole mode) due to low metallic absorption loss and relatively low optical radiation loss, however, they seriously deteriorate with increasing temperature and absorption loss [2 4].
Also, a very low material absorption loss (0.066 cm−1) and low confinement loss (4.73 × 10−4 cm−1) at the operating frequency f = 1 THz are obtained.
A porous-core honeycomb THz fiber has been proposed by Bao et al. [19] that exhibited low material absorption loss of 1.5 dB/cm at 1.0 THz.
As a result, the simulated quantum efficiency in the short-wavelength region is higher than that of the experimental because of the low optical absorption loss in the n-type poly-Si layer.
This is because of its high absorption in the green spectrum and the low absorption in the red spectrum [ 24].
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