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Risk analysis with all the inherent uncertainties is a prime candidate for Fuzzy Logic application.
This paper presents a fuzzy logic application for architectural site planning design.
It is known that conductive-bridge resistive-random-access-memory (CBRAM) device is very important for future high-density nonvolatile memory as well as logic application.
There are two major ideas that dominate the landscape of modal logic application in mathematics: Gödel's provability semantics and Tarski's topological semantics.
By changing the source/drain bias-polarity, electrical properties of the NW-devices can be tuned, whether the lowest possible leakage current, or maximum output current is desirable in a specific logic application.
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Three alternate QWFET device architectures are proposed and thoroughly investigated for 15 nm node and beyond logic applications.
For logic applications FinFET type devices are known to have good scalability down to 10 nm gate length.
This design could allow the integration of low-power n- and p-channel field-effect transistors for complementary logic applications.
DG FETs with underlap architectures exhibit better performance for logic applications owing to its improved immunity to short channel effects.
A two-way switch for binary decision diagram logic applications has been implemented using silicon single-electron transistors.
Carbon nanotube field-effect transistor (CNFET) is an appropriate candidate device for low-power multiple valued logic applications.
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