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Since, as indicated, the decline in the energy transfer efficiency from the phycobilisomes is relatively small, the decreased O2 evolution at limiting light is attributed to a change in the Microcoleus reaction center due to the excess light treatment.
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The enhanced conductivity under UV light illumination is attributed to the photogenerated carriers in the semiconducting nanowire.
The activity of as-synthesized and calcined Zn-Al LDHs under UV light was attributed to the presence of ZnO phase.
In the case of microcavity lasing, light confinement is attributed to the high refractive index of ZnO, and the light can be amplified within a single ZnO micro/nanocrystal.
It is proposed that the visible light response is attributed to the intra-band by the nitrogen doping and calcination-induced single electron-trapped oxygen vacancies (SETOV).
The probe molecule for aluminum ion exhibits excellent water solubility, and it shows strong blue fluorescence under ultraviolet light, which is attributed to the Photoinduced Electron Transfer (PET) process.
The improved light trapping is attributed to the multiple modes hybridization of propagating surface plasmon polaritons (SPPs), localized surface plasmons (LSPs) and the strong coupling of SPP waves at TM polarization along with the Floquet modes at TE polarization.
Catalytic upgrading over Meso-MFI increased the amount of light phenols, which is attributed to cracking of heavy phenols into light phenols and aromatics due to the catalytic effect of mesoporous Meso-MFI.
In the case of the OPV, ITO NH arrays used as a multifunctional photoelectrode (Fig. 8c) result in strong light harvesting, which is attributed to effective antireflection coating as well as light scattering effects, and enhanced carrier transport through highly crystalline ITO NHs.
These micro-nanostructures showed enhanced light absorption, which is attributed to surface plasmonics induced by the generation of both nano- and microstructures.
This relatively high light-up voltage is attributed to the non-ohmic nature of the ITO contact to the moderately doped p-GaN shell.
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