"light emission efficiency" is an accurate and usable phrase in written English.
You can use this phrase to refer to the degree to which a light source is able to release energy as light. For example, "LED lighting has a high light emission efficiency, meaning you can use less energy to get the same amount of illumination."
In this work, we present the concept that can uniformly transport the electrons into the Si NCs by employing 5.5 periods of SiCN/SiC superlattices (SLs) specially designed for an efficient electron transport layer, leading to an enhancement in the light emission efficiency of Si NC LED.
This leads to the improvement of light emission efficiency of the (0001) InGaN/GaN MQWs.
EBL can be utilized to produce metallic NPs exhibiting enhanced light emission efficiency.
As compared to silicon, they offer higher operating speeds, lower power consumption, or higher light emission efficiency.
The fabrication techniques aforementioned are mainstream techniques that have been applied to NP fabrication to improve light emission efficiency.
A suitable carrier injection layer is, therefore, very crucial for enhancing the light emission efficiency of Si NC LEDs.
The longer PL lifetime at 355-nm ablation yield CNDs with higher light emission efficiencies.
Unfortunately, bulk silicon is an indirect bandgap semiconductor with very low light-emission efficiency.
The ability to control the shape and size of nanocomposites is an important factor for defining their properties, such as the electronic band gap, conductivity, and light-emission efficiency [27].
Because the fluorescent dyes used in most microarray assays have slightly different efficiencies for light emission, the detection efficiencies of the phototubes has some wavelength dependence and hence differ for the different dyes, and because the PMTs exhibit nonlinearities at high and low intensities, the log-ratios measured often exhibit some systematic, intensity-dependent variation.
The incorporation of N in GaP allows one to tune the band gap energy and also to change the band gap character from an indirect one in GaP to a direct-like one in the GaNP alloys, leading to improvements in light emission efficiency[2, 3].
