Sentence examples for light absorption layer from inspiring English sources

First, CdO can serve as an n-type window or light absorption layer on transparent conducting oxide, such as Al- or Ga-doped ZnO, for solar cells[15, 16].

The higher electron mobility InGaAs light absorption layer with lattice matched to the InP substrate has a strong optical absorption in the range of 1.3 to approximately 1.55 μm which is the low-loss optical fiber window.

When the perovskite light absorption layer is sandwiched between n- and p-type charge selective contacts (Fig. 1c), two active junctions immediately form at the n-type electron transport layer (ETL) and the p-type hole transport layer (HTL) sides [22].

The value of J 0 is directly related to the recombination rate, indicating the thermal emission rate of electrons from the valence band to the conduction band in light absorption layer [16], which also has an impact on the open-circuit voltage.

The g-C3N4 layer on TiO2 nanorods acted as both block layer and effective light absorption layer could effectively promote the electron transport by retarding the backward recombination of electrons from TiO2 and electrolyte and also contribute additional electrons to increase the electron concentration in the photoanodes, thus to enhance the performance of QDSSCs.

At present, we are investigating the characterization of the SrGe2 thin films and their development on Si and glass substrates for the application of SrGe2 to near infrared light absorption layers of multijunction solar cells.

The chapter describes P-I-N photodiodes (PDs) composed mainly of indium gallium arsenide (InGaAs) as a light-absorption layer with no internal gain.

Solar cell structures have been suffering from the following trade-off related to the thickness of their active photovoltaic layers: thinner photovoltaic layers exhibit weaker light absorption while thicker layers exhibit stronger bulk carrier recombination.

The highest light absorption in silicon layer is observed as applying 100 nm spacer layer, which is further verified by electrical measurements.

The result shows that after the CdS/TNTs are dispersed in the P3HT PCBM layer, the light absorption of the active layer is greatly improved, and the charge recombination is largely controlled.

The absorption enhancement simulated in this study is due to surface plasmon polariton (SPP) excitation at the interface between these ultra-heavily n-doped GaAs or GaN substrates, which are nearly semimetals to SWIR light, and an absorption layer made of PbSe nano-spheres or nano-columns.