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for the second liftoff process (Fig. 1, step e).
The NHA can be fabricated either using a simple liftoff process with negative resist or double liftoff process with positive resist (see the "Methods" section).
NHA structures were fabricated through the double liftoff process as shown in Fig. 1.
Fig. 1 Schematic diagram of NHA fabrication through a double liftoff process.
MaN-2403 (Microresist Technology) was used for the single liftoff process.
a E-beam exposure, b development and Cr deposition, c first liftoff process, d CF4 RIE followed by O2 RIE, e 100-nm gold deposition and second liftoff process, and f final NHA structure.
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The SEM images of fabricated NHAs on a 100-nm gold film through single and double liftoff processes were compared in Fig. 2.
In order to mark the sample position, a thin film of Au metal was deposited on the sample surface followed by an opening of hole arrays using standard photolithography and liftoff processes [13].
The combustion process above the liftoff height can develop into different modes depending on the coflow temperature.
Such a process involves two metal depositions and liftoffs, whereas the current one contains only one metal deposition step, so is simpler.
Such a process involves fewer steps as no metal deposition and liftoff is needed, though the process would be limited by the etching selectivity between the resist and SiO2.
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