Sentence examples for length devices from inspiring English sources

Accumulation-mode devices are an alternative to conventional MOSFETs that do not require high cost ultrafast annealing technique for fabrication of smaller length devices.

The demand for low voltage, low power and high performance are the great challenges for engineering of sub-0.10 μm gate length devices.

Based on the 'real' doping profile, the impact of random device doping on 6-T SRAM static noise margins are discussed in detail for 35 nm physical gate length devices.

The multimodal model with estimated material properties at 2.8 MPa achieves a root mean squared error of 1.7 dB or less for two different length devices over a frequency range of 50 2000 Hz.

The reduction of drain-current enhancement for short-channel devices can be attributed to two competing factors: shorter gate length devices have increased longitudinal and vertical stress components which should result in improved drain-currents.

Within the study of SiGeC heterostructure MOS capacitors with a Schrödinger Poisson solver, we show that with doping levels required to control short channel effects of such ultra-short gate length devices, i.e. higher than 5×1018 cm−3, it is extremely hard to maintain a significant part of the electron density into the buried quantum well.

A 0.6 μm gate length device operates with a cut-off frequency of 7.3 GHz and a maximum oscillation frequency of 21 GHz.

Comparison indicates that the driving voltages of the proposed MRR-SC-MZI switching devices are 10 250 times smaller than those of the traditional MZI EO switches with the same EO region length, device length and structural parameters.

Designs should therefore be robust to both modeling errors and process, voltage, and temperature variations (PVT), increasingly important as process parameters (minimum channel length, device threshold, supply voltage, etc).

The influence of several parameters (surface recombination rate, substrate thickness and type, diffusion length, device geometry, doping levels) on device characteristics are simulated using the accurate two-dimensional numerical simulator DESSIS that allows to optimise the cell design.

A self-aligned T-gate technology for lattice-matched InP HEMTs is presented which addresses the issue of the maximization of sub 100 nm gate length device performance through the reduction of source and drain parasitic resistances.