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As a result, the external quantum efficiency for the proposed DUV LED structure is increased by 100% and the nearly efficiency-droop-free DUV LED structure is obtained experimentally.
(c) Cross-sectional view of the simulated nanorod LED structure.
Figure 4 H eterojunction LED structure and light emission of LED.
Those based on the reference LED structure had a dark current of 20 nA.
All these results supported a clear microscopy mechanism of excitation-emission process of the green MQW LED structure.
These results showed a clear picture of excitation-emission process of the green MQW LED structure with broad emission band.
In summary, temperature-dependent SSPL and TRPL spectra were studied for the green emission from InGaN/GaN MQW LED structure.
The schematic InGaN/GaN green LED structure was shown in Figure1. Figure 1 Schematic structure of InGaN/GaN MQW LEDs.
Figure4a shows the schematic diagram of these heterojunction LED structure, and Figure4b shows the photography of n-ZnO NRs/p+-Si (111).
(a) The schematic diagram of the heterojunction LED structure and (b) the photography of the light emission of LED under forward bias at the dark room.
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Side view of the simulated LED structure is shown for (a) the planar LED and (b) nanorod LED structures.
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